DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Woo-Young | ko |
dc.contributor.author | Ka, Du-Youn | ko |
dc.contributor.author | Cho, Byeong-Ok | ko |
dc.contributor.author | Kim, Sang-Youl | ko |
dc.contributor.author | Lee, Yong-Soo | ko |
dc.contributor.author | Lee, Hee-Chul | ko |
dc.date.accessioned | 2009-12-14T05:18:37Z | - |
dc.date.available | 2009-12-14T05:18:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-08 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.30, no.8, pp.822 - 824 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/14792 | - |
dc.description.abstract | For nonvolatile memory devices, capacitors with metal-ferroelectric-metal structures were fabricated using poly(vinylidene fluoride-trifluoroethylene) as a ferroelectric layer, and performance was estimated in terms of retention property. In the same thickness, the polarization retained longer as the writing pulsewidth (PW) was extended. With the same writing PW, a thicker capacitor maintained a polarized state longer. In conclusion, the performance for operating voltage, operating frequency, and data retention time is expected. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FIELDS | - |
dc.title | Retention Performance of Ferroelectric Polymer Film for Nonvolatile Memory Devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000268342400011 | - |
dc.identifier.scopusid | 2-s2.0-68249137204 | - |
dc.type.rims | ART | - |
dc.citation.volume | 30 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 822 | - |
dc.citation.endingpage | 824 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2009.2022961 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kim, Sang-Youl | - |
dc.contributor.localauthor | Lee, Hee-Chul | - |
dc.contributor.nonIdAuthor | Cho, Byeong-Ok | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Depolarization | - |
dc.subject.keywordAuthor | ferroelectric | - |
dc.subject.keywordAuthor | hysteresis | - |
dc.subject.keywordAuthor | low voltage | - |
dc.subject.keywordAuthor | metal-ferroelectric-metal (MFM) structure | - |
dc.subject.keywordAuthor | retention | - |
dc.subject.keywordAuthor | writing pulsewidth (PW) | - |
dc.subject.keywordPlus | FIELDS | - |
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