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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Properties of single transistor type ferroelectric-gated FET’s for nonvolatile memory applications

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dc.contributor.authorNo, Kwangsoo-
dc.contributor.authorKim, Yong-Seong-
dc.contributor.authorJung, Soon-Won-
dc.contributor.authorBan, Yong-Jun-
dc.contributor.authorJeong, Sang-Hyun-
dc.contributor.authorKim, Wan-Seop-
dc.contributor.authorKim, Young-Kil-
dc.date.accessioned2013-03-18T10:12:24Z-
dc.date.available2013-03-18T10:12:24Z-
dc.date.created2012-02-06-
dc.date.issued2004-08-19-
dc.identifier.citation5th Korea-Japan Conference on Ferroelectricity, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/147312-
dc.languageENG-
dc.titleProperties of single transistor type ferroelectric-gated FET’s for nonvolatile memory applications-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationname5th Korea-Japan Conference on Ferroelectricity-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorNo, Kwangsoo-
dc.contributor.nonIdAuthorKim, Yong-Seong-
dc.contributor.nonIdAuthorJung, Soon-Won-
dc.contributor.nonIdAuthorBan, Yong-Jun-
dc.contributor.nonIdAuthorJeong, Sang-Hyun-
dc.contributor.nonIdAuthorKim, Wan-Seop-
dc.contributor.nonIdAuthorKim, Young-Kil-
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MS-Conference Papers(학술회의논문)
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