Dual Metal and fully silicided metal gate processes with tunable workfunctionDual Metal and fully silicided metal gate processes with tunable workfunction
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Byung Jin | - |
| dc.date.accessioned | 2013-03-18T09:13:17Z | - |
| dc.date.available | 2013-03-18T09:13:17Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2004-03-05 | - |
| dc.identifier.citation | International NanoElectronics Materials Conference, v., no., pp.0 - 0 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/146879 | - |
| dc.language | ENG | - |
| dc.title | Dual Metal and fully silicided metal gate processes with tunable workfunction | - |
| dc.title.alternative | Dual Metal and fully silicided metal gate processes with tunable workfunction | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 0 | - |
| dc.citation.endingpage | 0 | - |
| dc.citation.publicationname | International NanoElectronics Materials Conference | - |
| dc.identifier.conferencecountry | France | - |
| dc.identifier.conferencecountry | France | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
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