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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Progressive breakdown statistics in ultra-thin silicon dioxidesProgressive breakdown statistics in ultra-thin silicon dioxides

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorLoh, WY-
dc.contributor.authorLi, MF-
dc.contributor.authorChan, DSH-
dc.contributor.authorAng, CH-
dc.contributor.authorZhen, ZJ-
dc.contributor.authorKwong, DL-
dc.date.accessioned2013-03-18T08:29:07Z-
dc.date.available2013-03-18T08:29:07Z-
dc.date.created2012-02-06-
dc.date.issued2003-07-08-
dc.identifier.citation10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), v., no., pp.157 - 157-
dc.identifier.urihttp://hdl.handle.net/10203/146536-
dc.languageENG-
dc.titleProgressive breakdown statistics in ultra-thin silicon dioxides-
dc.title.alternativeProgressive breakdown statistics in ultra-thin silicon dioxides-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage157-
dc.citation.endingpage157-
dc.citation.publicationname10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA)-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorLoh, WY-
dc.contributor.nonIdAuthorLi, MF-
dc.contributor.nonIdAuthorChan, DSH-
dc.contributor.nonIdAuthorAng, CH-
dc.contributor.nonIdAuthorZhen, ZJ-
dc.contributor.nonIdAuthorKwong, DL-
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EE-Conference Papers(학술회의논문)
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