HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applicationsHfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Byung Jin | - |
| dc.contributor.author | Kim, SJ | - |
| dc.contributor.author | Li, MF | - |
| dc.contributor.author | Zhu, C | - |
| dc.contributor.author | Chin, A | - |
| dc.contributor.author | Kwong, DL | - |
| dc.date.accessioned | 2013-03-18T08:28:56Z | - |
| dc.date.available | 2013-03-18T08:28:56Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-06-10 | - |
| dc.identifier.citation | Symposium on VLSI Technology, v., no., pp.77 - 77 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/146535 | - |
| dc.language | ENG | - |
| dc.title | HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications | - |
| dc.title.alternative | HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 77 | - |
| dc.citation.endingpage | 77 | - |
| dc.citation.publicationname | Symposium on VLSI Technology | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Kim, SJ | - |
| dc.contributor.nonIdAuthor | Li, MF | - |
| dc.contributor.nonIdAuthor | Zhu, C | - |
| dc.contributor.nonIdAuthor | Chin, A | - |
| dc.contributor.nonIdAuthor | Kwong, DL | - |
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