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A novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layerA novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layer

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorPark, CS-
dc.contributor.authorN. Balasubramanian, N-
dc.contributor.authorKwong, DL-
dc.date.accessioned2013-03-18T08:28:45Z-
dc.date.available2013-03-18T08:28:45Z-
dc.date.created2012-02-06-
dc.date.issued2003-06-10-
dc.identifier.citationSymposium on VLSI Technology, v., no., pp.149 - 149-
dc.identifier.urihttp://hdl.handle.net/10203/146534-
dc.languageENG-
dc.titleA novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layer-
dc.title.alternativeA novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layer-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage149-
dc.citation.endingpage149-
dc.citation.publicationnameSymposium on VLSI Technology-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorPark, CS-
dc.contributor.nonIdAuthorN. Balasubramanian, N-
dc.contributor.nonIdAuthorKwong, DL-
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EE-Conference Papers(학술회의논문)
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