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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster toolImproving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorYeo, CC-
dc.contributor.authorJoo, MS-
dc.contributor.authorWhoang, SJ-
dc.contributor.authorKwong, DL-
dc.contributor.authorBera, LK-
dc.contributor.authorMathew, S-
dc.date.accessioned2013-03-18T08:12:12Z-
dc.date.available2013-03-18T08:12:12Z-
dc.date.created2012-02-06-
dc.date.issued2003-09-19-
dc.identifier.citationInternational Conf. on Solid State Devices and Materials (SSDM), v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/146368-
dc.languageENG-
dc.titleImproving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool-
dc.title.alternativeImproving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameInternational Conf. on Solid State Devices and Materials (SSDM)-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorYeo, CC-
dc.contributor.nonIdAuthorJoo, MS-
dc.contributor.nonIdAuthorWhoang, SJ-
dc.contributor.nonIdAuthorKwong, DL-
dc.contributor.nonIdAuthorBera, LK-
dc.contributor.nonIdAuthorMathew, S-
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EE-Conference Papers(학술회의논문)
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