DSpace at KOASAS: Role of intentionally incorporated hydrogen in wide-band-gap ZnO thin film prepared by photo-MOCVD technique

DSpace at KOASAS

College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Role of intentionally incorporated hydrogen in wide-band-gap ZnO thin film prepared by photo-MOCVD technique

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Myong, S.Y. / Lim, Koeng Su researcher

Issue Date: 2004-07-26

Language: ENG

Citation: PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, v.772, pp.195 - 196

URI: http://hdl.handle.net/10203/146020

Appears in Collection: EE-Conference Papers(학술회의논문)

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Role of intentionally incorporated hydrogen in wide-band-gap ZnO thin film prepared by photo-MOCVD technique

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