DSpace at KOASAS: Role of intentionally incorporated hydrogen in wide-band-gap ZnO thin film prepared by photo-MOCVD technique

DSpace at KOASAS

College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Role of intentionally incorporated hydrogen in wide-band-gap ZnO thin film prepared by photo-MOCVD technique

Cited 0 time in webofscience

Cited 0 time in

Hit : 373
Download : 0

Export

Myong, S.Y. / Lim, Koeng Su researcher

Issue Date: 2004-07-26

Language: ENG

Citation: PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, v.772, pp.195 - 196

URI: http://hdl.handle.net/10203/146020

Appears in Collection: EE-Conference Papers(학술회의논문)

Files in This Item: There are no files associated with this item.

Display Full Item Record

qr_code

트윗하기

KOASAS

Knowledge Service Development Team, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea. T. 82-42-350-4493 Email. koasas@kaist.ac.kr
Copyright © 2016. Korea Advanced Institute of Science and Technology. All Rights Reserved.

KOASAS

KOASAS

Browse

Role of intentionally incorporated hydrogen in wide-band-gap ZnO thin film prepared by photo-MOCVD technique

KOASAS

Communities & Collections