Device characteristics of nanoscale metal/insulator tunnel transistors in the ballistic quantum transport regime
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Mincheol | - |
| dc.date.accessioned | 2013-03-18T05:49:28Z | - |
| dc.date.available | 2013-03-18T05:49:28Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-06-09 | - |
| dc.identifier.citation | China International Conference on Nanoscience and Technology, ChinaNANO 2005, v., no.PART 1, pp.525 - 528 | - |
| dc.identifier.issn | 1012-0394 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/145291 | - |
| dc.language | ENG | - |
| dc.title | Device characteristics of nanoscale metal/insulator tunnel transistors in the ballistic quantum transport regime | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-38549084255 | - |
| dc.type.rims | CONF | - |
| dc.citation.issue | PART 1 | - |
| dc.citation.beginningpage | 525 | - |
| dc.citation.endingpage | 528 | - |
| dc.citation.publicationname | China International Conference on Nanoscience and Technology, ChinaNANO 2005 | - |
| dc.identifier.conferencecountry | China | - |
| dc.identifier.conferencecountry | China | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
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