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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Channel mobility behaviour in high-K/metal gate NMOSFETsChannel mobility behaviour in high-K/metal gate NMOSFETs

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorMathew, S-
dc.contributor.authorBera, LK-
dc.contributor.authorBalasubramanian, N-
dc.contributor.authorJoo, MS-
dc.date.accessioned2013-03-18T05:21:53Z-
dc.date.available2013-03-18T05:21:53Z-
dc.date.created2012-02-06-
dc.date.issued2003-12-11-
dc.identifier.citation2nd International Conference on Materials for Advanced Technologies, v., no., pp.516 - 516-
dc.identifier.urihttp://hdl.handle.net/10203/145111-
dc.languageENG-
dc.titleChannel mobility behaviour in high-K/metal gate NMOSFETs-
dc.title.alternativeChannel mobility behaviour in high-K/metal gate NMOSFETs-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage516-
dc.citation.endingpage516-
dc.citation.publicationname2nd International Conference on Materials for Advanced Technologies-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorMathew, S-
dc.contributor.nonIdAuthorBera, LK-
dc.contributor.nonIdAuthorBalasubramanian, N-
dc.contributor.nonIdAuthorJoo, MS-
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EE-Conference Papers(학술회의논문)
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