Punchthrough Characteristics of CMOS Souble-Gate FinFET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Yang-Kyu | - |
| dc.contributor.author | Ryu, Seong-Wan | - |
| dc.contributor.author | Lee, Hyunjin | - |
| dc.date.accessioned | 2013-03-18T05:20:10Z | - |
| dc.date.available | 2013-03-18T05:20:10Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-02 | - |
| dc.identifier.citation | The 12th Korean Conference on Semiconductors (KCS), v., no., pp.97 - 98 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/145100 | - |
| dc.description.abstract | Hyunjin | - |
| dc.language | KOR | - |
| dc.title | Punchthrough Characteristics of CMOS Souble-Gate FinFET | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 97 | - |
| dc.citation.endingpage | 98 | - |
| dc.citation.publicationname | The 12th Korean Conference on Semiconductors (KCS) | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.contributor.nonIdAuthor | Ryu, Seong-Wan | - |
| dc.contributor.nonIdAuthor | Lee, Hyunjin | - |
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