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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Niobium oxide (Nb2O5) as a high-K dielectric for RF IC applicationNiobium oxide (Nb2O5) as a high-K dielectric for RF IC application

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorKim, SJ-
dc.contributor.authorLi, MF-
dc.contributor.authorZhu, C-
dc.contributor.authorChin, A-
dc.contributor.authorYu, MB-
dc.contributor.authorXiong, YZ-
dc.date.accessioned2013-03-18T05:16:45Z-
dc.date.available2013-03-18T05:16:45Z-
dc.date.created2012-02-06-
dc.date.issued2005-07-03-
dc.identifier.citation3rd International Conference on Materials for Advanced Technologies, v., no., pp.10 - 10-
dc.identifier.urihttp://hdl.handle.net/10203/145071-
dc.languageENG-
dc.titleNiobium oxide (Nb2O5) as a high-K dielectric for RF IC application-
dc.title.alternativeNiobium oxide (Nb2O5) as a high-K dielectric for RF IC application-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage10-
dc.citation.endingpage10-
dc.citation.publicationname3rd International Conference on Materials for Advanced Technologies-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorKim, SJ-
dc.contributor.nonIdAuthorLi, MF-
dc.contributor.nonIdAuthorZhu, C-
dc.contributor.nonIdAuthorChin, A-
dc.contributor.nonIdAuthorYu, MB-
dc.contributor.nonIdAuthorXiong, YZ-
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EE-Conference Papers(학술회의논문)
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