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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature ProcessBehavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorJoo, MS-
dc.contributor.authorChi, DZ-
dc.contributor.authorBalasubramanian, N-
dc.contributor.authorKwong, DL-
dc.date.accessioned2013-03-18T05:02:27Z-
dc.date.available2013-03-18T05:02:27Z-
dc.date.created2012-02-06-
dc.date.issued2004-09-14-
dc.identifier.citationConf. on Solid State Devices and Materials (SSDM), v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/144969-
dc.languageENG-
dc.titleBehavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process-
dc.title.alternativeBehavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameConf. on Solid State Devices and Materials (SSDM)-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorJoo, MS-
dc.contributor.nonIdAuthorChi, DZ-
dc.contributor.nonIdAuthorBalasubramanian, N-
dc.contributor.nonIdAuthorKwong, DL-
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EE-Conference Papers(학술회의논문)
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