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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Germanium MOS capacitors with ultra thin HfO2 gate dielectricGermanium MOS capacitors with ultra thin HfO2 gate dielectric

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorZhang, QC-
dc.contributor.authorZu, C-
dc.contributor.authorWu, N-
dc.contributor.authorChin, A-
dc.contributor.authorLi, MF-
dc.contributor.authorBera, LK-
dc.date.accessioned2013-03-18T04:47:08Z-
dc.date.available2013-03-18T04:47:08Z-
dc.date.created2012-02-06-
dc.date.issued2003-12-11-
dc.identifier.citationInternational Conference on Materials for Advanced Technologies, v., no., pp.513 - 513-
dc.identifier.urihttp://hdl.handle.net/10203/144849-
dc.languageENG-
dc.titleGermanium MOS capacitors with ultra thin HfO2 gate dielectric-
dc.title.alternativeGermanium MOS capacitors with ultra thin HfO2 gate dielectric-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage513-
dc.citation.endingpage513-
dc.citation.publicationnameInternational Conference on Materials for Advanced Technologies-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorZhang, QC-
dc.contributor.nonIdAuthorZu, C-
dc.contributor.nonIdAuthorWu, N-
dc.contributor.nonIdAuthorChin, A-
dc.contributor.nonIdAuthorLi, MF-
dc.contributor.nonIdAuthorBera, LK-
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EE-Conference Papers(학술회의논문)
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