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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Metal-Ferroelectric-Insulator-Semiconductor (MFIS) FET's Using LiNbO3/A1N/Si(100) Structures for Nonvolatile Memory Applications

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dc.contributor.authorNo, Kwangsoo-
dc.contributor.authorJung, Soon-Won-
dc.contributor.authorJeong, Sang-Hyun-
dc.contributor.authorKim, Yong-Seong-
dc.contributor.authorIn, Yong-Il-
dc.contributor.authorKim, Wan-Seop-
dc.contributor.authorBan, Yong-Jun-
dc.date.accessioned2013-03-18T04:43:59Z-
dc.date.available2013-03-18T04:43:59Z-
dc.date.created2012-02-06-
dc.date.issued2004-04-06-
dc.identifier.citationThe 16th International Symposium on Intergrated Ferroelectrics, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/144829-
dc.languageENG-
dc.titleMetal-Ferroelectric-Insulator-Semiconductor (MFIS) FET's Using LiNbO3/A1N/Si(100) Structures for Nonvolatile Memory Applications-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameThe 16th International Symposium on Intergrated Ferroelectrics-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorNo, Kwangsoo-
dc.contributor.nonIdAuthorJung, Soon-Won-
dc.contributor.nonIdAuthorJeong, Sang-Hyun-
dc.contributor.nonIdAuthorKim, Yong-Seong-
dc.contributor.nonIdAuthorIn, Yong-Il-
dc.contributor.nonIdAuthorKim, Wan-Seop-
dc.contributor.nonIdAuthorBan, Yong-Jun-
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MS-Conference Papers(학술회의논문)
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