The unipolar resistive switching of the Al/Al(x)O(y)/Al structure is investigated for nonvolatile memory. Following the production of aluminum oxide film (Al(x)O(y)) by plasma oxidation, a high ratio of on-state and off-state currents (>= 10(4)) is achieved, and characteristics of switching endurance are reported. Due to the good ductility of aluminum, the performance of resistive switching on a flexible substrate is not degraded by severe substrate bending. The low process temperature of the plasma oxidation process is advantageous for the fabrication of flexible electronic devices and modern interconnection processes. (c) 2008 American Institute of Physics.