Resistive switching of aluminum oxide for flexible memory

Cited 92 time in webofscience Cited 0 time in scopus
  • Hit : 287
  • Download : 817
The unipolar resistive switching of the Al/Al(x)O(y)/Al structure is investigated for nonvolatile memory. Following the production of aluminum oxide film (Al(x)O(y)) by plasma oxidation, a high ratio of on-state and off-state currents (>= 10(4)) is achieved, and characteristics of switching endurance are reported. Due to the good ductility of aluminum, the performance of resistive switching on a flexible substrate is not degraded by severe substrate bending. The low process temperature of the plasma oxidation process is advantageous for the fabrication of flexible electronic devices and modern interconnection processes. (c) 2008 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2008-06
Language
English
Article Type
Article
Keywords

NIO FILMS

Citation

APPLIED PHYSICS LETTERS, v.92, no.22

ISSN
0003-6951
DOI
10.1063/1.2947587
URI
http://hdl.handle.net/10203/14443
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 92 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0