RPCVD silicon nitride passivation of InGaAsP with temperature ramping during deposition
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim J. | - |
| dc.contributor.author | Cha J.-H. | - |
| dc.contributor.author | Ha M.-L. | - |
| dc.contributor.author | Kim C.-Y. | - |
| dc.contributor.author | Kwon, Young Se | - |
| dc.date.accessioned | 2013-03-18T03:39:21Z | - |
| dc.date.available | 2013-03-18T03:39:21Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-05-15 | - |
| dc.identifier.citation | 207th Meeting of the Electrochemical Society, v., no., pp.596 - | - |
| dc.identifier.issn | 1091-8213 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/144413 | - |
| dc.language | ENG | - |
| dc.title | RPCVD silicon nitride passivation of InGaAsP with temperature ramping during deposition | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-32344444372 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 596 | - |
| dc.citation.publicationname | 207th Meeting of the Electrochemical Society | - |
| dc.identifier.conferencecountry | Canada | - |
| dc.identifier.conferencecountry | Canada | - |
| dc.contributor.localauthor | Kwon, Young Se | - |
| dc.contributor.nonIdAuthor | Kim J. | - |
| dc.contributor.nonIdAuthor | Cha J.-H. | - |
| dc.contributor.nonIdAuthor | Ha M.-L. | - |
| dc.contributor.nonIdAuthor | Kim C.-Y. | - |
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