The Effect of Composition and Annealing Environment on Formation of Nanocrystal Si Memory using ECR-PECVD-Deposited Silicon-Rich Silicon Oxide

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 527
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorCha, Daigil-
dc.contributor.authorShin, JungHoon-
dc.contributor.authorJeong, Soo-Hwan-
dc.contributor.authorCha, Young Kwan-
dc.contributor.authorYoo, In K.-
dc.date.accessioned2013-03-18T00:08:51Z-
dc.date.available2013-03-18T00:08:51Z-
dc.date.created2012-02-06-
dc.date.issued2004-
dc.identifier.citationMaterials Research Society Fall, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/143049-
dc.languageENG-
dc.titleThe Effect of Composition and Annealing Environment on Formation of Nanocrystal Si Memory using ECR-PECVD-Deposited Silicon-Rich Silicon Oxide-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameMaterials Research Society Fall-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorCha, Daigil-
dc.contributor.nonIdAuthorJeong, Soo-Hwan-
dc.contributor.nonIdAuthorCha, Young Kwan-
dc.contributor.nonIdAuthorYoo, In K.-
Appears in Collection
NT-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0