DC and AC Characteristics of 10 nm T-Gate MOSFETs with Source/Drain-to-gate Non-Overlapped Structure
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | - |
| dc.date.accessioned | 2013-03-17T23:52:54Z | - |
| dc.date.available | 2013-03-17T23:52:54Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003 | - |
| dc.identifier.citation | Silicon Nanoelectronics Workshop 2003, v., no., pp.24 - 25 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/142970 | - |
| dc.language | ENG | - |
| dc.title | DC and AC Characteristics of 10 nm T-Gate MOSFETs with Source/Drain-to-gate Non-Overlapped Structure | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 24 | - |
| dc.citation.endingpage | 25 | - |
| dc.citation.publicationname | Silicon Nanoelectronics Workshop 2003 | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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