The electronic structure of Si impurities in HfO2
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chang, Kee-Joo | - |
| dc.contributor.author | Kim, D.-Y. | - |
| dc.contributor.author | Kang, J. | - |
| dc.date.accessioned | 2013-03-17T08:21:17Z | - |
| dc.date.available | 2013-03-17T08:21:17Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005 | - |
| dc.identifier.citation | 8th Asian Workshop on First-Principles Electronic Structure Calculations, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/141542 | - |
| dc.language | ENG | - |
| dc.title | The electronic structure of Si impurities in HfO2 | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 8th Asian Workshop on First-Principles Electronic Structure Calculations | - |
| dc.identifier.conferencecountry | China | - |
| dc.identifier.conferencecountry | China | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Kim, D.-Y. | - |
| dc.contributor.nonIdAuthor | Kang, J. | - |
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