First-principles study of direct tunneling through ultra thin gate oxides

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dc.contributor.authorKang, J-
dc.contributor.authorKim, YH-
dc.contributor.authorChang, Kee-Joo-
dc.date.accessioned2013-03-17T07:59:21Z-
dc.date.available2013-03-17T07:59:21Z-
dc.date.created2012-02-06-
dc.date.issued2006-10-
dc.identifier.citation한국물리학회 가을학술논문발표회, v., no., pp.380 - 380-
dc.identifier.urihttp://hdl.handle.net/10203/141359-
dc.languageENG-
dc.publisher한국물리학회-
dc.titleFirst-principles study of direct tunneling through ultra thin gate oxides-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage380-
dc.citation.endingpage380-
dc.citation.publicationname한국물리학회 가을학술논문발표회-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorKang, J-
dc.contributor.nonIdAuthorKim, YH-
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PH-Conference Papers(학술회의논문)
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