DC Field | Value | Language |
---|---|---|
dc.contributor.author | Eom, Ji Hye | - |
dc.contributor.author | Lee, kye Ung | - |
dc.contributor.author | Ahn, Byung Tae | - |
dc.date.accessioned | 2013-03-17T07:01:51Z | - |
dc.date.available | 2013-03-17T07:01:51Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-10-03 | - |
dc.identifier.citation | 2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan,, v., no., pp.958 - 0 | - |
dc.identifier.issn | 1091-8213 | - |
dc.identifier.uri | http://hdl.handle.net/10203/140916 | - |
dc.language | ENG | - |
dc.title | New vapor-induced crystallization of amorphous Si using the transport of Al/Ni chlorides | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-22244470450 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 958 | - |
dc.citation.endingpage | 0 | - |
dc.citation.publicationname | 2004 Joint International Meeting - 206th Meeting of the Electrochemical Society/2004 Fall Meeting of the Electrochemical Society of Japan, | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Eom, Ji Hye | - |
dc.contributor.nonIdAuthor | Lee, kye Ung | - |
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