H-related Defects Complexes in HfO2: a Model for Positive Fixed Charge Defects

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dc.contributor.authorChang, Kee-Joo-
dc.contributor.authorKang, J.-
dc.contributor.authorLee, E.-C.-
dc.contributor.authorJin, Y.-G.-
dc.date.accessioned2013-03-17T05:07:05Z-
dc.date.available2013-03-17T05:07:05Z-
dc.date.created2012-02-06-
dc.date.issued2004-11-
dc.identifier.citation7th Asian Workshop on First-Principles Electronic Structure Calculations, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/140099-
dc.languageENG-
dc.titleH-related Defects Complexes in HfO2: a Model for Positive Fixed Charge Defects-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname7th Asian Workshop on First-Principles Electronic Structure Calculations-
dc.identifier.conferencecountryTaiwan, Province of China-
dc.identifier.conferencecountryTaiwan, Province of China-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorKang, J.-
dc.contributor.nonIdAuthorLee, E.-C.-
dc.contributor.nonIdAuthorJin, Y.-G.-
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PH-Conference Papers(학술회의논문)
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