Low Power Highly Linear RF CMOS Mixer with 7dB IP3 improvement Adopting MOSFET Transconductance Linearization by Multiple Gated Transistors

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 376
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorLee, Kwyro-
dc.contributor.authorKim, Tae Wook-
dc.contributor.authorKim, Bonkee-
dc.date.accessioned2013-03-17T04:55:38Z-
dc.date.available2013-03-17T04:55:38Z-
dc.date.created2012-02-06-
dc.date.issued2004-
dc.identifier.citationThe 11th Korean Conference on Semiconductors, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/140019-
dc.languageKOR-
dc.titleLow Power Highly Linear RF CMOS Mixer with 7dB IP3 improvement Adopting MOSFET Transconductance Linearization by Multiple Gated Transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 11th Korean Conference on Semiconductors-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorKim, Tae Wook-
dc.contributor.nonIdAuthorKim, Bonkee-
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0