Effect of epitaxy and lattice mismatch on saturation magnetization of gamma -Fe(4)N thin films

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We report the effect of epitaxial growth and lattice mismatch on the enhancement of saturation magnetization (M(s)) of ferromagnetic gamma(')-Fe(4)N thin films deposited on different single crystal substrates having lattice mismatches from 0% to 11%. It was found that M(s) in the gamma(')-Fe(4)N film increased with increasing degree of epitaxy and minimizing lattice mismatch between the film and the substrate. Maximum saturation magnetization of 1980 +/- 20 emu/cm(3) (about 24% higher than previous result) was obtained with LaAlO(3)(100) substrate having zero lattice mismatch after postannealing of 30 min, which is believed to originate from magnetovolume effect in well-ordered epitaxially grown films.
Publisher
AMER INST PHYSICS
Issue Date
2008-06
Language
English
Article Type
Article
Keywords

IRON NITRIDES; GROWTH; MOMENT; FE4N; ALPHA-'FE16N2; BILAYERS; FE16N2

Citation

APPLIED PHYSICS LETTERS, v.92, no.22

ISSN
0003-6951
DOI
10.1063/1.2940599
URI
http://hdl.handle.net/10203/13934
Appears in Collection
RIMS Journal Papers
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