DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Yang-Kyu | - |
dc.contributor.author | Ku, Cheon-Hak | - |
dc.contributor.author | Ryu, Seong-Wan | - |
dc.date.accessioned | 2013-03-17T02:53:55Z | - |
dc.date.available | 2013-03-17T02:53:55Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-06 | - |
dc.identifier.citation | IEEE Electron Device Society, v., no., pp.185 - 188 | - |
dc.identifier.uri | http://hdl.handle.net/10203/139126 | - |
dc.language | ENG | - |
dc.title | A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 185 | - |
dc.citation.endingpage | 188 | - |
dc.citation.publicationname | IEEE Electron Device Society | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Ku, Cheon-Hak | - |
dc.contributor.nonIdAuthor | Ryu, Seong-Wan | - |
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