A Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET

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dc.contributor.authorChoi, Yang-Kyu-
dc.contributor.authorKu, Cheon-Hak-
dc.contributor.authorRyu, Seong-Wan-
dc.date.accessioned2013-03-17T02:53:55Z-
dc.date.available2013-03-17T02:53:55Z-
dc.date.created2012-02-06-
dc.date.issued2005-06-
dc.identifier.citationIEEE Electron Device Society, v., no., pp.185 - 188-
dc.identifier.urihttp://hdl.handle.net/10203/139126-
dc.languageENG-
dc.titleA Compact Modeling of Threshold Voltage Shift by a Quantum Confinement Effect in UTB MOSFET-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage185-
dc.citation.endingpage188-
dc.citation.publicationnameIEEE Electron Device Society-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorKu, Cheon-Hak-
dc.contributor.nonIdAuthorRyu, Seong-Wan-
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EE-Conference Papers(학술회의논문)
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