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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Characteristics of SiO2 film grown by atomic layer deposition as the gate insulator of low-temperature polysilicon thin-film transistors

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dc.contributor.authorLee, WJ-
dc.contributor.authorChun, MH-
dc.contributor.authorCheong, KS-
dc.contributor.authorPark, KC-
dc.contributor.authorPark, Chong-Ook-
dc.contributor.authorCao, G-
dc.contributor.authorRha, SK-
dc.date.accessioned2013-03-17T02:35:38Z-
dc.date.available2013-03-17T02:35:38Z-
dc.date.created2012-02-06-
dc.date.issued2006-09-10-
dc.identifier.citationIUMRS International Conference in Asia 2006, IUMRS-ICA 2006, v.124-126, no.PART 1, pp.247 - 250-
dc.identifier.issn1012-0394-
dc.identifier.urihttp://hdl.handle.net/10203/138949-
dc.languageENG-
dc.titleCharacteristics of SiO2 film grown by atomic layer deposition as the gate insulator of low-temperature polysilicon thin-film transistors-
dc.typeConference-
dc.identifier.scopusid2-s2.0-38549085882-
dc.type.rimsCONF-
dc.citation.volume124-126-
dc.citation.issuePART 1-
dc.citation.beginningpage247-
dc.citation.endingpage250-
dc.citation.publicationnameIUMRS International Conference in Asia 2006, IUMRS-ICA 2006-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorPark, Chong-Ook-
dc.contributor.nonIdAuthorLee, WJ-
dc.contributor.nonIdAuthorChun, MH-
dc.contributor.nonIdAuthorCheong, KS-
dc.contributor.nonIdAuthorPark, KC-
dc.contributor.nonIdAuthorCao, G-
dc.contributor.nonIdAuthorRha, SK-
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