DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Chang-Yup | ko |
dc.contributor.author | Yoon, Soon-Gil | ko |
dc.contributor.author | Jo, Young-Hun | ko |
dc.contributor.author | Shin, Sung-Chul | ko |
dc.date.accessioned | 2009-12-02T01:31:52Z | - |
dc.date.available | 2009-12-02T01:31:52Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-09 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.95, no.12 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/13874 | - |
dc.description.abstract | We have investigated the magnetic properties of molybdenum-doped (0-5 wt %) indium oxide films deposited on (100) MgO substrates using pulsed-laser deposition technique. Interestingly these films were found to reveal room-temperature ferromagnetism, where the magnetization increases with Mo doping. The maximum saturation magnetization of similar to 6.6 emu/cc was found for similar to 5 wt % Mo doping, providing approximately five times enhancement in comparison to the undoped film. We believe that this enhancement is ascribed to the magnetic moments of Mo ions occupied in the In sites. (C) 2009 American Institute of Physics. [doi:10.1063/1.3232243] | - |
dc.description.sponsorship | This work was supported by the National Research Laboratory Program Contract No. R0A-2007-000-20026-0 and the Global Partnership Program Contract No. K20702000014-08E0200-01410 through the National Re- search Foundation of Korea funded by the Ministry of Edu- cation, Science and Technology. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MAGNETIC SEMICONDUCTORS | - |
dc.subject | IN2O3 | - |
dc.subject | MAGNETORESISTANCE | - |
dc.subject | MODEL | - |
dc.title | Room-temperature ferromagnetism observed in Mo-doped indium oxide films | - |
dc.type | Article | - |
dc.identifier.wosid | 000270243800040 | - |
dc.identifier.scopusid | 2-s2.0-70349705632 | - |
dc.type.rims | ART | - |
dc.citation.volume | 95 | - |
dc.citation.issue | 12 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3232243 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Shin, Sung-Chul | - |
dc.contributor.nonIdAuthor | Yoon, Soon-Gil | - |
dc.contributor.nonIdAuthor | Jo, Young-Hun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MAGNETIC SEMICONDUCTORS | - |
dc.subject.keywordPlus | IN2O3 | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | MODEL | - |
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