DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Yang-Kyu | - |
dc.contributor.author | Yun, C | - |
dc.contributor.author | Park, D | - |
dc.contributor.author | Cheung, N | - |
dc.date.accessioned | 2013-03-17T01:14:03Z | - |
dc.date.available | 2013-03-17T01:14:03Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-09 | - |
dc.identifier.citation | the 13th International Conference on Ion Implantation Technology, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/138211 | - |
dc.language | ENG | - |
dc.title | Gate oxide damage from high dose implantation of hydrogen | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | the 13th International Conference on Ion Implantation Technology | - |
dc.identifier.conferencecountry | Austria | - |
dc.identifier.conferencecountry | Austria | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Yun, C | - |
dc.contributor.nonIdAuthor | Park, D | - |
dc.contributor.nonIdAuthor | Cheung, N | - |
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