Growth of 棺-Ga2O3 nanowires with straight and bent shapes by simple evaporation without catalyst
- Issue Date
- 2002-08-20
- Language
- KOR
- Citation
The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002, v.42
- ISSN
- 0374-4884
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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