A Self-Heating Effect Modeling of GaAs MESFET Using Pulsed I-V Measurement

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dc.contributor.author홍성철-
dc.contributor.author고경민-
dc.contributor.author박현민-
dc.contributor.author고상수-
dc.contributor.author김덕환-
dc.date.accessioned2013-03-16T17:42:55Z-
dc.date.available2013-03-16T17:42:55Z-
dc.date.created2012-02-06-
dc.date.issued2001-
dc.identifier.citationThe 8th Korean Conference on Semiconductors, v., no., pp.273 - 274-
dc.identifier.urihttp://hdl.handle.net/10203/133883-
dc.languageKOR-
dc.titleA Self-Heating Effect Modeling of GaAs MESFET Using Pulsed I-V Measurement-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage273-
dc.citation.endingpage274-
dc.citation.publicationnameThe 8th Korean Conference on Semiconductors-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor홍성철-
dc.contributor.nonIdAuthor고경민-
dc.contributor.nonIdAuthor박현민-
dc.contributor.nonIdAuthor고상수-
dc.contributor.nonIdAuthor김덕환-
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EE-Conference Papers(학술회의논문)
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