Characteristics of tunneling nitride grown by electron cyclotron resonance nitrogen plasma nitridation and its application to low voltage EEPROM

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dc.contributor.authorLee, Kwyro-
dc.contributor.authorMin, Kyeong-Sik-
dc.date.accessioned2013-03-16T16:40:13Z-
dc.date.available2013-03-16T16:40:13Z-
dc.date.created2012-02-06-
dc.date.issued2000-
dc.identifier.citationExtended abstracts of the international conference on Solid-State Devices and Materials, v., no., pp.290 - 291-
dc.identifier.urihttp://hdl.handle.net/10203/133319-
dc.languageENG-
dc.titleCharacteristics of tunneling nitride grown by electron cyclotron resonance nitrogen plasma nitridation and its application to low voltage EEPROM-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage290-
dc.citation.endingpage291-
dc.citation.publicationnameExtended abstracts of the international conference on Solid-State Devices and Materials-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorMin, Kyeong-Sik-
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EE-Conference Papers(학술회의논문)
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