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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Conference Papers(학술회의논문)

Electrical and optical characteristics of isoelectronic Al-doped GaN films grown by metal organic chemical vapor deposition

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dc.contributor.authorLee, JH-
dc.contributor.authorKim, JH-
dc.contributor.authorKo, HM-
dc.contributor.authorBae, SB-
dc.contributor.authorLee, KS-
dc.contributor.authorCho, Yong-Hoon-
dc.contributor.authorHahm, SH-
dc.contributor.authorLee, YH-
dc.contributor.authorLee, JH-
dc.date.accessioned2013-03-16T14:01:10Z-
dc.date.available2013-03-16T14:01:10Z-
dc.date.created2012-02-06-
dc.date.issued2002-
dc.identifier.citation, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/131934-
dc.languageENG-
dc.titleElectrical and optical characteristics of isoelectronic Al-doped GaN films grown by metal organic chemical vapor deposition-
dc.typeConference-
dc.type.rimsCONF-
dc.identifier.conferencecountryUnited Kingdom-
dc.identifier.conferencecountryUnited Kingdom-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorLee, JH-
dc.contributor.nonIdAuthorKim, JH-
dc.contributor.nonIdAuthorKo, HM-
dc.contributor.nonIdAuthorBae, SB-
dc.contributor.nonIdAuthorLee, KS-
dc.contributor.nonIdAuthorHahm, SH-
dc.contributor.nonIdAuthorLee, YH-
dc.contributor.nonIdAuthorLee, JH-
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PH-Conference Papers(학술회의논문)
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