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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictionsRadiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorKim, SJ-
dc.contributor.authorLing, CH-
dc.contributor.authorJoo, MS-
dc.contributor.authorYeo, IS-
dc.date.accessioned2013-03-16T13:04:13Z-
dc.date.available2013-03-16T13:04:13Z-
dc.date.created2012-02-06-
dc.date.issued1999-07-05-
dc.identifier.citationProc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I, v., no., pp.30 - 30-
dc.identifier.urihttp://hdl.handle.net/10203/131547-
dc.languageENG-
dc.titleRadiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions-
dc.title.alternativeRadiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage30-
dc.citation.endingpage30-
dc.citation.publicationnameProc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (I-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorKim, SJ-
dc.contributor.nonIdAuthorLing, CH-
dc.contributor.nonIdAuthorJoo, MS-
dc.contributor.nonIdAuthorYeo, IS-
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EE-Conference Papers(학술회의논문)
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