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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Quasi-Planar NMOS FinFETs with sub-100nm Gate Lengths

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dc.contributor.authorChoi, Yang-Kyu-
dc.contributor.authorLindert, Nick-
dc.contributor.authorChang, Leland-
dc.contributor.authorAnderson, Erik-
dc.contributor.authorLee, Wenchin-
dc.contributor.authorKing, Tsu-Jae-
dc.contributor.authorBokor, Jeffrey-
dc.contributor.authorHu, Chenming-
dc.date.accessioned2013-03-16T12:51:46Z-
dc.date.available2013-03-16T12:51:46Z-
dc.date.created2012-02-06-
dc.date.issued2001-06-
dc.identifier.citation59th IEEE Device Research Conference Proceedings, v., no., pp.26 - 27-
dc.identifier.urihttp://hdl.handle.net/10203/131447-
dc.languageENG-
dc.publisherIEEE-
dc.titleQuasi-Planar NMOS FinFETs with sub-100nm Gate Lengths-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage26-
dc.citation.endingpage27-
dc.citation.publicationname59th IEEE Device Research Conference Proceedings-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorLindert, Nick-
dc.contributor.nonIdAuthorChang, Leland-
dc.contributor.nonIdAuthorAnderson, Erik-
dc.contributor.nonIdAuthorLee, Wenchin-
dc.contributor.nonIdAuthorKing, Tsu-Jae-
dc.contributor.nonIdAuthorBokor, Jeffrey-
dc.contributor.nonIdAuthorHu, Chenming-
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EE-Conference Papers(학술회의논문)
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