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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Characterization of Ultrathin Plasma Nitrided Gate Dielectrics in PMOSFET for 0.18µm Technology and BeyondCharacterization of Ultrathin Plasma Nitrided Gate Dielectrics in PMOSFET for 0.18µm Technology and Beyond

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorTan, SS-
dc.contributor.authorAng, CH-
dc.contributor.authorLek, CM-
dc.contributor.authorChen, T-
dc.contributor.authorSee, A-
dc.contributor.authorChan, L-
dc.date.accessioned2013-03-16T12:47:42Z-
dc.date.available2013-03-16T12:47:42Z-
dc.date.created2012-02-06-
dc.date.issued2002-07-08-
dc.identifier.citation9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), v., no., pp.254 - 254-
dc.identifier.urihttp://hdl.handle.net/10203/131418-
dc.languageENG-
dc.titleCharacterization of Ultrathin Plasma Nitrided Gate Dielectrics in PMOSFET for 0.18µm Technology and Beyond-
dc.title.alternativeCharacterization of Ultrathin Plasma Nitrided Gate Dielectrics in PMOSFET for 0.18µm Technology and Beyond-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage254-
dc.citation.endingpage254-
dc.citation.publicationname9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA)-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorTan, SS-
dc.contributor.nonIdAuthorAng, CH-
dc.contributor.nonIdAuthorLek, CM-
dc.contributor.nonIdAuthorChen, T-
dc.contributor.nonIdAuthorSee, A-
dc.contributor.nonIdAuthorChan, L-
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EE-Conference Papers(학술회의논문)
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