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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Effects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate OxideEffects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate Oxide

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorLek, CM-
dc.contributor.authorLoh, WY-
dc.contributor.authorAng, CH-
dc.contributor.authorLin, W-
dc.contributor.authorTan, YL-
dc.contributor.authorZhen, JZ-
dc.contributor.authorTan, J-
dc.date.accessioned2013-03-16T12:47:19Z-
dc.date.available2013-03-16T12:47:19Z-
dc.date.created2012-02-06-
dc.date.issued2002-07-08-
dc.identifier.citation9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/131416-
dc.languageENG-
dc.titleEffects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate Oxide-
dc.title.alternativeEffects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate Oxide-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationname9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA)-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorLek, CM-
dc.contributor.nonIdAuthorLoh, WY-
dc.contributor.nonIdAuthorAng, CH-
dc.contributor.nonIdAuthorLin, W-
dc.contributor.nonIdAuthorTan, YL-
dc.contributor.nonIdAuthorZhen, JZ-
dc.contributor.nonIdAuthorTan, J-
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EE-Conference Papers(학술회의논문)
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