The Effects of Interruption Time on High In Content InGaN/GaN Multi Quantum Wells Grown by Metalorganic Chemical Vapor Deposition
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이정용 | ko |
| dc.date.accessioned | 2013-03-16T12:36:46Z | - |
| dc.date.available | 2013-03-16T12:36:46Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-02 | - |
| dc.identifier.citation | 제8회 한국반도체학술대회, pp.583 - 584 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/131336 | - |
| dc.language | Korean | - |
| dc.publisher | KCS | - |
| dc.title | The Effects of Interruption Time on High In Content InGaN/GaN Multi Quantum Wells Grown by Metalorganic Chemical Vapor Deposition | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 583 | - |
| dc.citation.endingpage | 584 | - |
| dc.citation.publicationname | 제8회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | COEX 컨벤션센터 | - |
| dc.contributor.localauthor | 이정용 | - |
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