Effects of carrier localization on the optical characteristics of MOCVD-grown InGaN/GaN heterostructrues

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dc.contributor.authorCho, Yong-Hoon-
dc.contributor.authorSchmidt, TJ-
dc.contributor.authorBidnyk, S-
dc.contributor.authorGainer, GH-
dc.contributor.authorSong, JJ-
dc.contributor.authorKeller, S-
dc.contributor.authorDenbaars, SP-
dc.contributor.authorKim, DS-
dc.contributor.authorJhe, W-
dc.date.accessioned2013-03-16T11:37:21Z-
dc.date.available2013-03-16T11:37:21Z-
dc.date.created2012-02-06-
dc.date.issued1999-
dc.identifier.citationThe 3rd International Conference on Nitride Semiconductors (ICNS-3), v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/130898-
dc.languageENG-
dc.titleEffects of carrier localization on the optical characteristics of MOCVD-grown InGaN/GaN heterostructrues-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 3rd International Conference on Nitride Semiconductors (ICNS-3)-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorSchmidt, TJ-
dc.contributor.nonIdAuthorBidnyk, S-
dc.contributor.nonIdAuthorGainer, GH-
dc.contributor.nonIdAuthorSong, JJ-
dc.contributor.nonIdAuthorKeller, S-
dc.contributor.nonIdAuthorDenbaars, SP-
dc.contributor.nonIdAuthorKim, DS-
dc.contributor.nonIdAuthorJhe, W-
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PH-Conference Papers(학술회의논문)
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