Integrity of gate oxides irradiated under electron-beam lithography conditionsIntegrity of gate oxides irradiated under electron-beam lithography conditions
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Byung Jin | - |
| dc.contributor.author | Chong, PF | - |
| dc.contributor.author | Chor, EF | - |
| dc.contributor.author | Joo, MS | - |
| dc.contributor.author | Yeo, IS | - |
| dc.date.accessioned | 2013-03-16T10:34:49Z | - |
| dc.date.available | 2013-03-16T10:34:49Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1999-09-08 | - |
| dc.identifier.citation | Extended Abstract of the 1999 International Conf. on Solid State Devices and Materials (SSDM), v., no., pp.182 - 182 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/130414 | - |
| dc.language | ENG | - |
| dc.title | Integrity of gate oxides irradiated under electron-beam lithography conditions | - |
| dc.title.alternative | Integrity of gate oxides irradiated under electron-beam lithography conditions | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 182 | - |
| dc.citation.endingpage | 182 | - |
| dc.citation.publicationname | Extended Abstract of the 1999 International Conf. on Solid State Devices and Materials (SSDM) | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Chong, PF | - |
| dc.contributor.nonIdAuthor | Chor, EF | - |
| dc.contributor.nonIdAuthor | Joo, MS | - |
| dc.contributor.nonIdAuthor | Yeo, IS | - |
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.