DSpace at KOASAS
College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV techniquePredicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 375
  • Download : 0
Export
DC FieldValueLanguage
dc.contributor.authorCho, Byung Jin-
dc.contributor.authorGuan, H-
dc.contributor.authorLi, MF-
dc.contributor.authorZhang, Y-
dc.contributor.authorJie, BB-
dc.contributor.authorXie, J-
dc.contributor.authorWang, JLF-
dc.date.accessioned2013-03-16T10:34:38Z-
dc.date.available2013-03-16T10:34:38Z-
dc.date.created2012-02-06-
dc.date.issued1999-10-15-
dc.identifier.citation1999 IEEE International Integrated Reliability Workshop (IRW) Final Report, v., no., pp.20 - 20-
dc.identifier.urihttp://hdl.handle.net/10203/130413-
dc.languageENG-
dc.titlePredicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique-
dc.title.alternativePredicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage20-
dc.citation.endingpage20-
dc.citation.publicationname1999 IEEE International Integrated Reliability Workshop (IRW) Final Report-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorGuan, H-
dc.contributor.nonIdAuthorLi, MF-
dc.contributor.nonIdAuthorZhang, Y-
dc.contributor.nonIdAuthorJie, BB-
dc.contributor.nonIdAuthorXie, J-
dc.contributor.nonIdAuthorWang, JLF-
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

Display Simple Item Record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


rss_1.0 rss_2.0 atom_1.0