DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Li, MF | - |
dc.contributor.author | He, YD | - |
dc.contributor.author | Ma, SG | - |
dc.contributor.author | Lo, KF | - |
dc.contributor.author | Xu, MZ | - |
dc.date.accessioned | 2013-03-16T10:34:28Z | - |
dc.date.available | 2013-03-16T10:34:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-11-29 | - |
dc.identifier.citation | Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc, v., no., pp.0 - 0 | - |
dc.identifier.uri | http://hdl.handle.net/10203/130412 | - |
dc.language | ENG | - |
dc.title | Roles of primary hothole and FN electron fluences in gate oxide breakdown | - |
dc.title.alternative | Roles of primary hothole and FN electron fluences in gate oxide breakdown | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 0 | - |
dc.citation.endingpage | 0 | - |
dc.citation.publicationname | Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | He, YD | - |
dc.contributor.nonIdAuthor | Ma, SG | - |
dc.contributor.nonIdAuthor | Lo, KF | - |
dc.contributor.nonIdAuthor | Xu, MZ | - |
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