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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

A strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxideA strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorAng, CH-
dc.contributor.authorLing, CH-
dc.contributor.authorCheng, ZY-
dc.date.accessioned2013-03-16T10:34:08Z-
dc.date.available2013-03-16T10:34:08Z-
dc.date.created2012-02-06-
dc.date.issued2000-08-28-
dc.identifier.citationExtended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), v., no., pp.254 - 254-
dc.identifier.urihttp://hdl.handle.net/10203/130410-
dc.languageENG-
dc.titleA strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide-
dc.title.alternativeA strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage254-
dc.citation.endingpage254-
dc.citation.publicationnameExtended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM)-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorAng, CH-
dc.contributor.nonIdAuthorLing, CH-
dc.contributor.nonIdAuthorCheng, ZY-
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EE-Conference Papers(학술회의논문)
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