Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxidesBipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Byung Jin | - |
| dc.contributor.author | Loh, WY | - |
| dc.contributor.author | Li, MF | - |
| dc.contributor.author | Xu, Z | - |
| dc.date.accessioned | 2013-03-16T10:31:53Z | - |
| dc.date.available | 2013-03-16T10:31:53Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-07-09 | - |
| dc.identifier.citation | 8th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), v., no., pp.59 - 59 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/130395 | - |
| dc.language | ENG | - |
| dc.title | Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides | - |
| dc.title.alternative | Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 59 | - |
| dc.citation.endingpage | 59 | - |
| dc.citation.publicationname | 8th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA) | - |
| dc.identifier.conferencecountry | Singapore | - |
| dc.identifier.conferencecountry | Singapore | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Loh, WY | - |
| dc.contributor.nonIdAuthor | Li, MF | - |
| dc.contributor.nonIdAuthor | Xu, Z | - |
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