DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ha J.K. | - |
dc.contributor.author | Chung B.H. | - |
dc.contributor.author | Han S.Y. | - |
dc.contributor.author | Choi J.O. | - |
dc.contributor.author | Kim, Ho Gi | - |
dc.date.accessioned | 2013-03-16T06:34:45Z | - |
dc.date.available | 2013-03-16T06:34:45Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-08-14 | - |
dc.identifier.citation | 13th International Vaccum Microelectronics Conference, v.19, no.3, pp.929 - 932 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/128438 | - |
dc.language | ENG | - |
dc.title | Novel resistive layer structure using via holes of an insulating interdielectric as a current path | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-0035326451 | - |
dc.type.rims | CONF | - |
dc.citation.volume | 19 | - |
dc.citation.issue | 3 | - |
dc.citation.beginningpage | 929 | - |
dc.citation.endingpage | 932 | - |
dc.citation.publicationname | 13th International Vaccum Microelectronics Conference | - |
dc.identifier.conferencecountry | China | - |
dc.identifier.conferencecountry | China | - |
dc.contributor.localauthor | Kim, Ho Gi | - |
dc.contributor.nonIdAuthor | Ha J.K. | - |
dc.contributor.nonIdAuthor | Chung B.H. | - |
dc.contributor.nonIdAuthor | Han S.Y. | - |
dc.contributor.nonIdAuthor | Choi J.O. | - |
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