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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Normal-incident In0.2Ga0.8As/GaAs quantum well infrared photodetector employing a p-i-n-i-p camel diode structure

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dc.contributor.authorSon, H.-
dc.contributor.authorPark, J.-
dc.contributor.authorHong, Songcheol-
dc.contributor.authorJo, S.-J.-
dc.contributor.authorSong, J.-I.-
dc.date.accessioned2013-03-16T05:00:06Z-
dc.date.available2013-03-16T05:00:06Z-
dc.date.created2012-02-06-
dc.date.issued2001-06-25-
dc.identifier.citationDevice Research Conference (DRC), v., no., pp.157 - 158-
dc.identifier.urihttp://hdl.handle.net/10203/127687-
dc.languageENG-
dc.titleNormal-incident In0.2Ga0.8As/GaAs quantum well infrared photodetector employing a p-i-n-i-p camel diode structure-
dc.typeConference-
dc.identifier.scopusid2-s2.0-0034860291-
dc.type.rimsCONF-
dc.citation.beginningpage157-
dc.citation.endingpage158-
dc.citation.publicationnameDevice Research Conference (DRC)-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorSon, H.-
dc.contributor.nonIdAuthorPark, J.-
dc.contributor.nonIdAuthorJo, S.-J.-
dc.contributor.nonIdAuthorSong, J.-I.-
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EE-Conference Papers(학술회의논문)
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