Junction formation by hydrogenation for HgCdTe diodes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, K.D. | ko |
| dc.contributor.author | Choi, J.H. | ko |
| dc.contributor.author | Bae, S.H. | ko |
| dc.contributor.author | Lee, Hee Chul | ko |
| dc.date.accessioned | 2013-03-16T04:05:33Z | - |
| dc.date.available | 2013-03-16T04:05:33Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-04-16 | - |
| dc.identifier.citation | Infrared Technology and Applications XXVII, pp.412 - 418 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/127273 | - |
| dc.language | English | - |
| dc.publisher | SPIE | - |
| dc.title | Junction formation by hydrogenation for HgCdTe diodes | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000173642200045 | - |
| dc.identifier.scopusid | 2-s2.0-0035761555 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 412 | - |
| dc.citation.endingpage | 418 | - |
| dc.citation.publicationname | Infrared Technology and Applications XXVII | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Orlando, FL | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.contributor.nonIdAuthor | Yang, K.D. | - |
| dc.contributor.nonIdAuthor | Choi, J.H. | - |
| dc.contributor.nonIdAuthor | Bae, S.H. | - |
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