Thermal expansion coefficient of heavily doped LPCVD polycrystalline (poly-Si) thin film was extracted by microgauge
sensors. When electrical power was applied to the microgauge, it was heated up and thermal expansion occurred. From the
relation between applied current and measured displacement at the microgauge, thermal expansion coefficient of thin film
was extracted. The results revealed a value of 2.9x106 /K of thermal expansion coefficient of highly doped poly-Si thin
films with standard deviation ofO.24x106 /K.