Characteristics of p-channel Si nano-crystal memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Han K. | ko |
| dc.contributor.author | Kim I. | ko |
| dc.contributor.author | Shin H. | ko |
| dc.date.accessioned | 2013-03-16T03:10:23Z | - |
| dc.date.available | 2013-03-16T03:10:23Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000-12-10 | - |
| dc.identifier.citation | 2000 IEEE International Electron Devices Meeting, pp.309 - 312 | - |
| dc.identifier.issn | 0163-1918 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/126824 | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.title | Characteristics of p-channel Si nano-crystal memory | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000166855900071 | - |
| dc.identifier.scopusid | 2-s2.0-0034453473 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 309 | - |
| dc.citation.endingpage | 312 | - |
| dc.citation.publicationname | 2000 IEEE International Electron Devices Meeting | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | San Francisco, CA | - |
| dc.contributor.localauthor | Shin H. | - |
| dc.contributor.nonIdAuthor | Han K. | - |
| dc.contributor.nonIdAuthor | Kim I. | - |
- Appears in Collection
- RIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 3 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.