Ultrathin silicon dioxide formation by ozone on ultraflat SI surface
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kurokawa A. | - |
| dc.contributor.author | Maeda T. | - |
| dc.contributor.author | Sakamoto K. | - |
| dc.contributor.author | Itoh H. | - |
| dc.contributor.author | Nakamura K. | - |
| dc.contributor.author | Koike K. | - |
| dc.contributor.author | Moon D.W. | - |
| dc.contributor.author | Ha Y.H. | - |
| dc.contributor.author | Ichimura S. | - |
| dc.contributor.author | Ando A. | - |
| dc.date.accessioned | 2013-03-16T03:02:37Z | - |
| dc.date.available | 2013-03-16T03:02:37Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1999-04-05 | - |
| dc.identifier.citation | Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics, v.567, no., pp.21 - 26 | - |
| dc.identifier.issn | 0272-9172 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/126754 | - |
| dc.language | ENG | - |
| dc.title | Ultrathin silicon dioxide formation by ozone on ultraflat SI surface | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-0033313605 | - |
| dc.type.rims | CONF | - |
| dc.citation.volume | 567 | - |
| dc.citation.beginningpage | 21 | - |
| dc.citation.endingpage | 26 | - |
| dc.citation.publicationname | Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Ha Y.H. | - |
| dc.contributor.nonIdAuthor | Kurokawa A. | - |
| dc.contributor.nonIdAuthor | Maeda T. | - |
| dc.contributor.nonIdAuthor | Sakamoto K. | - |
| dc.contributor.nonIdAuthor | Itoh H. | - |
| dc.contributor.nonIdAuthor | Nakamura K. | - |
| dc.contributor.nonIdAuthor | Koike K. | - |
| dc.contributor.nonIdAuthor | Moon D.W. | - |
| dc.contributor.nonIdAuthor | Ichimura S. | - |
| dc.contributor.nonIdAuthor | Ando A. | - |
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